Correlated excited states in the narrow band gap semiconductor FeSi and antiferromagnetic screening of local spin moments

Sergii Khmelevskyi (Korresp. Autor*in), Georg Kresse, Peter Mohn

Veröffentlichungen: Beitrag in FachzeitschriftArtikelPeer Reviewed

Abstract

The physical properties of the semiconductor FeSi with very narrow band gap, anomalous behavior of the magnetic susceptibility and metal-insulator transition at elevated temperatures attract great interest due to the still controversial theoretical understanding of their origin. On one side the purely bandlike mechanism of the gap formation in FeSi at low temperature is well established; on the other side a number of experiments and their theoretical interpretation suggest a rich physics of strong correlations at finite temperature. In this work we use an ab initio scheme based on the random-phase approximation and local spin-density approximation (RPA@LSDA) to reveal the role of the electron correlation effects in FeSi extending it by applying a fixed spin moment constraint. In the parameter-free framework we show that correlation effects essentially alter the one-electron LSDA results leading to the formation of an additional state with finite magnetic moment on Fe, whose energy is almost degenerate with the nonmagnetic ground state. This explains the results of high-field experiments, which found a first-order metamagnetic phase transition into a metallic ferromagnetic state. Our results suggest a strongly correlated nature of the low-energy excitations in FeSi. From our supercells calculations we reveal that these excitations are local and exhibit a Kondo-like behavior since a strong antiferromagnetic screening is present.
OriginalspracheEnglisch
Aufsatznummer125205
Seitenumfang8
FachzeitschriftPhysical Review B
Jahrgang98
Ausgabenummer12
DOIs
PublikationsstatusVeröffentlicht - 20 Sep. 2018

ÖFOS 2012

  • 103015 Kondensierte Materie
  • 103011 Halbleiterphysik

Zitationsweisen