Electrical and micromechanical performance of ultrasonically cleaned silicon wafers

A. Nadtochiy (Korresp. Autor*in), Artem Podolian, Vasyl Kuryliuk, A. Kuryliuk, Oleg Korotchenkov, Julian Schmid, Viktor Schlosser

Veröffentlichungen: Beitrag in BuchBeitrag in Konferenzband

Abstract

The evolution of the electrical and micromechanical properties of Si wafers subjected to a kHz-frequency ultrasonic treatment in a water-containing ultrasonic cleaning bath is reported. The cleaning stages observed with varying treatment time are discussed. It is believed that, wafer treating during the first ? 60 min is capable of removing contaminating particulates from the wafer surface and actives interface dangling bonds. These are leading to a decrease of subsurface resistance towards dislocation displacements as observed by the micro-hardness decrease, affect free carrier migration barriers seen in variations of the I-V barrier heights, and acts as recombination centers resulting in accelerated photovoltage decays. Although an exact mechanism is not yet clarified, a partial healing of the bonds may occur at longer excitation times ( ? 60-120 min) thus partially reversing the observed changes.
OriginalspracheEnglisch
TitelMicroelectronics Proceedings (MIEL) 2010
Untertitel27th International Conference on Microelectronics, Niš, Serbia, 16-19 May 2010
Herausgeber (Verlag)IEEE Xplore
Seiten261-264
Seitenumfang4
ISBN (Print)978-1-4244-7200-0
DOIs
PublikationsstatusVeröffentlicht - 2010

ÖFOS 2012

  • 1030 Physik, Astronomie
  • 103009 Festkörperphysik

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