Abstract
A software tool ("Ionshaper") has been developed which allows calibrated high precision simulation of ion beam
processing. The continuum model is based on a discrete surface element approach that includes first and second order
sputtering and re-deposition in 2D. Atomistic effects are implicitly included by adjusting various simulation parameters to fit
atomistic Monte Carlo simulations. Predicted spatial and temporal surface evolution is in good agreement with focused ion
beam (FIB) experiments.
Originalsprache | Englisch |
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Seiten (von - bis) | 936–939 |
Fachzeitschrift | Microelectronic Engineering |
Jahrgang | 83 |
DOIs | |
Publikationsstatus | Veröffentlicht - 2006 |
ÖFOS 2012
- 103020 Oberflächenphysik
- 210006 Nanotechnologie