TY - JOUR
T1 - Structural, electronic and magnetic properties of Gd investigated by DFT+U methods: Bulk, clean and H-covered (0001) surfaces
AU - Petersen, Melissa
AU - Hafner, Juergen
AU - Marsman, Martijn
N1 - Zeitschrift: Journal of Physics Condensed Matter
DOI: 10.1088/0953-8984/18/30/007
Coden: JCOME
Art-Nr: 007
Affiliations: Institut für Materialphysik, Center for Computational Materials Science, Universität Wien, Sensengasse 8/12, A-1090 Wien, Austria; Department of Chemistry, University of Cape Town, Rondebosch, 7701, Cape Town, South Africa
Adressen: Petersen, M.; Department of Chemistry; University of Cape Town Rondebosch, 7701, Cape Town, South Africa; email: [email protected]
Import aus Scopus: 2-s2.0-33746270178
22.10.2007: Datenanforderung 1935 (Import Sachbearbeiter)
22.10.2007: Datenanforderung 1936 (Import Sachbearbeiter)
PY - 2006
Y1 - 2006
N2 - The structural, electronic and magnetic properties of bulk Gd and of the Gd(0001) surface have been investigated using abinitio calculations based on density-functional theory (DFT) and on DFT+U calculations. In agreement with earlier work we find that the neglect of the strong correlation of the 4f electrons leads to the wrong prediction of an antiferromagnetic ground state of hexagonal close-packed (hcp) Gd, as well as to substantial errors in the magnetic moments and exchange splitting. If the strong on-site Coulomb repulsion in the 4f band is described by a Hubbard-like term added to the DFT Hamiltonian, an improved description of the structural, electronic and magnetic properties of both bulk Gd and of the Gd(0001) surface is achieved. The enhancement of the exchange coupling and of the magnetic ordering temperature at the surface is investigated using a simple model. The adsorption of hydrogen on the Gd(0001) surface and its diffusion into deeper layers has been investigated. It is shown that H adsorption eliminates the electronic surface state which is partly responsible for the enhanced magnetism at the clean surface and leads to the formation of H-induced electronic states below the bottom of the valence band. Œ 2006 IOP Publishing Ltd.
AB - The structural, electronic and magnetic properties of bulk Gd and of the Gd(0001) surface have been investigated using abinitio calculations based on density-functional theory (DFT) and on DFT+U calculations. In agreement with earlier work we find that the neglect of the strong correlation of the 4f electrons leads to the wrong prediction of an antiferromagnetic ground state of hexagonal close-packed (hcp) Gd, as well as to substantial errors in the magnetic moments and exchange splitting. If the strong on-site Coulomb repulsion in the 4f band is described by a Hubbard-like term added to the DFT Hamiltonian, an improved description of the structural, electronic and magnetic properties of both bulk Gd and of the Gd(0001) surface is achieved. The enhancement of the exchange coupling and of the magnetic ordering temperature at the surface is investigated using a simple model. The adsorption of hydrogen on the Gd(0001) surface and its diffusion into deeper layers has been investigated. It is shown that H adsorption eliminates the electronic surface state which is partly responsible for the enhanced magnetism at the clean surface and leads to the formation of H-induced electronic states below the bottom of the valence band. Œ 2006 IOP Publishing Ltd.
U2 - 10.1088/0953-8984/18/30/007
DO - 10.1088/0953-8984/18/30/007
M3 - Article
SN - 0953-8984
VL - 18
SP - 7021
EP - 7043
JO - Journal of Physics: Condensed Matter
JF - Journal of Physics: Condensed Matter
IS - 30
ER -