beta-Si3N4(0001)/Si(111) interface: Phosphorus defects, valence band offsets, and their role of passivating the interface states

E. Flage-Larsen (Corresponding author), O. M. Lovvik, C. M. Fang, G. Kresse

Publications: Contribution to journalArticlePeer Reviewed

Abstract

This work investigates the β-Si3N4(0001)/Si(111) interface based on a model with fully saturated interface bonds. The charge transfer at the interface and band alignment are calculated. The band alignment is corrected by GW0 calculations. Furthermore, we investigate how substitutional phosphorus defects affect the electronic structure of the interface, in particular how they saturate the interface states and modify the valence band offsets.
Original languageEnglish
Article number165310
Number of pages10
JournalPhysical Review B
Volume88
Issue number16
DOIs
Publication statusPublished - 18 Oct 2013

Austrian Fields of Science 2012

  • 103009 Solid state physics
  • 103015 Condensed matter
  • 103025 Quantum mechanics
  • 103036 Theoretical physics

Keywords

  • INITIO MOLECULAR-DYNAMICS
  • SILICON SOLAR-CELLS
  • ELECTRONIC-STRUCTURE
  • NITRIDE
  • SPECTROSCOPY
  • SI(100)

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