Abstract
This work investigates the β-Si3N4(0001)/Si(111)
interface based on a model with fully saturated interface bonds. The
charge transfer at the interface and band alignment are calculated. The
band alignment is corrected by GW0
calculations. Furthermore, we investigate how substitutional phosphorus
defects affect the electronic structure of the interface, in particular
how they saturate the interface states and modify the valence band
offsets.
Original language | English |
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Article number | 165310 |
Number of pages | 10 |
Journal | Physical Review B |
Volume | 88 |
Issue number | 16 |
DOIs | |
Publication status | Published - 18 Oct 2013 |
Austrian Fields of Science 2012
- 103009 Solid state physics
- 103015 Condensed matter
- 103025 Quantum mechanics
- 103036 Theoretical physics
Keywords
- INITIO MOLECULAR-DYNAMICS
- SILICON SOLAR-CELLS
- ELECTRONIC-STRUCTURE
- NITRIDE
- SPECTROSCOPY
- SI(100)