Diffusion of Si and Ge in the intermetallic phase Fe3Si: Ion implantation and SIMS studies

Diffuson of silicon and germanium in the D03 phase of the system Fe-Si has been studied. As there is no radioactive Si isotope for detailed self-diffusion studies the rare stable isotope 30Si was used. Tracer deposition was done by ion implantation. Profiles were analysed by means of secondary ion mass spectrometry (SIMS). In a preceding study [1] the radioisotope 71Ge served as a substitute for Si. One experiment with the short-lived 31Si showed very similar diffusion rates for Si and Ge, so that the approach of using the homologous element seemed to be appropiate. As a check for this approach we also performed diffusion experiments with the stable isotope 74Ge in analogy to those with 30Si. The obtained data confirms the strong asymmetry between the diffusion of majority and minority constituents in D03 phases. The data also shows the homology of Ge and Si. Finally this demonstrates that radiotracer methods and SIMS technique can be successfully combined in order to cover a large temperature interval. © 2001 Scitec Publications.