Growth of ultra-flat ultra-thin alkali antimonide photocathode films

W. G. Stam; M. Gaowei; E. M. Echeverria; Kenneth Evans-Lutterodt; Jean Jordan-Sweet; T. Juffmann; S. Karkare; J. Maxson; S. J. van der Molen; C. Pennington; P. Saha; J. Smedley; R. M. Tromp

doi:10.1063/5.0213461

Growth of ultra-flat ultra-thin alkali antimonide photocathode films

W. G. Stam (Corresponding author), M. Gaowei (Corresponding author), E. M. Echeverria, Kenneth Evans-Lutterodt, Jean Jordan-Sweet, T. Juffmann, S. Karkare, J. Maxson, S. J. van der Molen, C. Pennington, P. Saha, J. Smedley, R. M. Tromp

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Abstract

Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H-SiC (Gr/4H-SiC), 3C-SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (

Original language	English
Article number	061114
Number of pages	8
Journal	APL Materials
Volume	12
Issue number	6
DOIs	https://doi.org/10.1063/5.0213461
Publication status	Published - Jun 2024

Austrian Fields of Science 2012

103021 Optics
103018 Materials physics

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10.1063/5.0213461Licence: CC BY-NC 4.0

Cite this

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abstract = "Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H-SiC (Gr/4H-SiC), 3C-SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (",

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AU - Stam, W. G.

AU - Gaowei, M.

AU - Echeverria, E. M.

AU - Evans-Lutterodt, Kenneth

AU - Jordan-Sweet, Jean

AU - Juffmann, T.

AU - Karkare, S.

AU - Maxson, J.

AU - van der Molen, S. J.

AU - Pennington, C.

AU - Saha, P.

AU - Smedley, J.

AU - Tromp, R. M.

PY - 2024/6

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AB - Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H-SiC (Gr/4H-SiC), 3C-SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (

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Growth of ultra-flat ultra-thin alkali antimonide photocathode films

Abstract

Austrian Fields of Science 2012

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ONEM: Optical Near-field Electron Microscopy

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Growth of ultra-flat ultra-thin alkali antimonide photocathode films

Abstract

Austrian Fields of Science 2012

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ONEM: Optical Near-field Electron Microscopy

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