High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

Chanyoung Yim; Kangho Lee; Niall McEvoy; Maria O'Brien; Sarah Riazimehr; Nina C. Berner; Conor P. Cullen; Jani Kotakoski; Jannik C. Meyer; Max C. Lemme; Georg S. Duesberg

doi:10.1021/acsnano.6b04898

High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

Chanyoung Yim
, Kangho Lee
, Niall McEvoy (Corresponding author)
, Maria O'Brien
, Sarah Riazimehr
, Nina C. Berner
, Conor P. Cullen
, Jani Kotakoski
, Jannik C. Meyer
, Max C. Lemme
, Georg S. Duesberg

Physics of Nanostructured Materials

Publications: Contribution to journal › Article › Peer Reviewed

Abstract

Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe ₂), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe ₂ on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe ₂ as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.

Original language	English
Pages (from-to)	9550-9558
Number of pages	9
Journal	ACS Nano
Volume	10
Issue number	10
DOIs	https://doi.org/10.1021/acsnano.6b04898
Publication status	Published - Oct 2016

Funding

This work is supported by the SFI under Contract No. 12/RC/2278 and PI_10/IN.1/I3030, and the European Union Seventh Framework Programme (Graphene Flagship, 604391). M.O.B. acknowledges an Irish Research Council scholarship via the Enterprise Partnership Scheme, Project 201517, Award 12508. N.M. acknowledges SFI (14/TIDA/2329). J.C.M. acknowledges support from the Austrian Science Fund (FWF) Project No. P25721-N20. M.C.L. acknowledges funding through an ERC grant (307311) and the German Research Foundation (DFG, LE 2440/1-2 and GRK 1564). J.K acknowledges funding from the Vienna Science and Technology Fund via project MA14-009.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Austrian Fields of Science 2012

103018 Materials physics

Keywords

transition metal dichalcogenides
platinum diselenide
low-temperature synthesis
two-dimensional materials
sensors
optoelectronic devices
TRANSITION-METAL-DICHALCOGENIDE
CHEMICAL-VAPOR-DEPOSITION
SILICON HETEROJUNCTION PHOTODETECTOR
JUNCTION SOLAR-CELLS
MOS2 ATOMIC LAYERS
2-DIMENSIONAL MATERIALS
SCHOTTKY-BARRIER
THIN-FILMS
GRAPHENE
SENSORS

Access to Document

10.1021/acsnano.6b04898

https://arxiv.org/abs/1606.08673Licence: Other

Cite this

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title = "High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature",

abstract = "Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe 2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe 2 on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe 2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies. ",

keywords = "transition metal dichalcogenides, platinum diselenide, low-temperature synthesis, two-dimensional materials, sensors, optoelectronic devices, TRANSITION-METAL-DICHALCOGENIDE, CHEMICAL-VAPOR-DEPOSITION, SILICON HETEROJUNCTION PHOTODETECTOR, JUNCTION SOLAR-CELLS, MOS2 ATOMIC LAYERS, 2-DIMENSIONAL MATERIALS, SCHOTTKY-BARRIER, THIN-FILMS, GRAPHENE, SENSORS",

author = "Chanyoung Yim and Kangho Lee and Niall McEvoy and Maria O'Brien and Sarah Riazimehr and Berner, \{Nina C.\} and Cullen, \{Conor P.\} and Jani Kotakoski and Meyer, \{Jannik C.\} and Lemme, \{Max C.\} and Duesberg, \{Georg S.\}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = oct,

doi = "10.1021/acsnano.6b04898",

language = "English",

volume = "10",

pages = "9550--9558",

journal = "ACS Nano",

issn = "1936-0851",

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AU - Yim, Chanyoung

AU - Lee, Kangho

AU - McEvoy, Niall

AU - O'Brien, Maria

AU - Riazimehr, Sarah

AU - Berner, Nina C.

AU - Cullen, Conor P.

AU - Kotakoski, Jani

AU - Meyer, Jannik C.

AU - Lemme, Max C.

AU - Duesberg, Georg S.

PY - 2016/10

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N2 - Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe 2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe 2 on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe 2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.

AB - Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe 2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe 2 on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe 2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.

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KW - 2-DIMENSIONAL MATERIALS

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KW - THIN-FILMS

KW - GRAPHENE

KW - SENSORS

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High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

Abstract

Funding

UN SDGs

Austrian Fields of Science 2012

Keywords

Access to Document

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Variational Modeling of Carbon Nanostructures

Structure-property relationship of 2D material modifications

Cite this

High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

Abstract

Funding

UN SDGs

Austrian Fields of Science 2012

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Variational Modeling of Carbon Nanostructures

Structure-property relationship of 2D material modifications

Cite this