Abstract
A facile low pressure annealing route using NH3 as a hydrogen source for the structural and chemical modification of SiC nanowires (SiCNWs) is presented. The developed route transforms SiCNWs into tubular SiC nanostructures while coaxial SiO2/SiCNWs reverse their sheath/core structure. Our findings suggest a decomposition process induced via the preferential substitution of silicon by hydrogen and via the difference in diffusion rates of available atomic species, which leads to axial structural rearrangement. In addition to these effects, the procedure improves the crystallinity of the samples. The process could be exploited as a viable route to manipulate a variety of nanostructures and films for doping and etching and structural manipulation.
Original language | English |
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Pages (from-to) | 602-607 |
Number of pages | 6 |
Journal | Journal of Solid State Chemistry |
Volume | 182 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 |
Austrian Fields of Science 2012
- 1030 Physics, Astronomy