@article{e0ac9b5094c34f86b49beef7a2347f09,
title = "Mechanism of the Generation of Donor-Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity",
keywords = "INTERMETALLIC SEMICONDUCTORS, CONDUCTIVITY MECHANISMS, FEATURES, DISORDER, HEUSLER, ALLOYS",
author = "Romaka, \{V. A.\} and Rogl, \{P. -F.\} and D. Frushart and D. Kaczorowski",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = mar,
doi = "10.1134/S1063782618030193",
language = "English",
volume = "52",
pages = "294--304",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "3",
}