Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon

Luiz Felipe Aguinsky; Frâncio Rodrigues; Georg Wachter; Michael Trupke; Ulrich Schmid; Andreas Hössinger; Josef Weinbub

doi:10.1016/j.sse.2022.108262

Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon

Luiz Felipe Aguinsky (Corresponding author)
, Frâncio Rodrigues
, Georg Wachter
, Michael Trupke
, Ulrich Schmid
, Andreas Hössinger
, Josef Weinbub

Quantum Science

Publications: Contribution to journal › Article › Peer Reviewed

Original language	English
Article number	108262
Number of pages	8
Journal	Solid-State Electronics
Volume	191
DOIs	https://doi.org/10.1016/j.sse.2022.108262
Publication status	Published - May 2022

Funding

The financial support by the Austrian Federal Ministry for Digital and Economic Affairs, the National Foundation for Research, Technology and Development and the Christian Doppler Research Association is gratefully acknowledged. M. Trupke and G. Wachter gratefully acknowledge support from the EU H2020 framework programme (QuanTELCO, 862721), the FWF (SiC-EiC, I 3167-N27), and the FFG (QSense4Power, 877615). The authors acknowledge TU Wien Bibliothek for financial support through its Open Access Funding Program.

Austrian Fields of Science 2012

103021 Optics
202028 Microelectronics

Keywords

Isotropic etching
MEMS
Microfabrication
Optical devices
SF plasma etching
Topography simulations
FLUX CALCULATION
SF(6 )plasma etching

Access to Document

10.1016/j.sse.2022.108262Licence: CC BY 4.0

Cite this

@article{9e437d7c6fbe42bb9b015839ac67d3cf,

title = "Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon",

keywords = "Isotropic etching, MEMS, Microfabrication, Optical devices, SF plasma etching, Topography simulations, FLUX CALCULATION, SF(6 )plasma etching",

author = "Aguinsky, \{Luiz Felipe\} and Fr{\^a}ncio Rodrigues and Georg Wachter and Michael Trupke and Ulrich Schmid and Andreas H{\"o}ssinger and Josef Weinbub",

note = "Funding Information: The financial support by the Austrian Federal Ministry for Digital and Economic Affairs, the National Foundation for Research, Technology and Development and the Christian Doppler Research Association is gratefully acknowledged. M. Trupke and G. Wachter gratefully acknowledge support from the EU H2020 framework programme (QuanTELCO, 862721), the FWF (SiC-EiC, I 3167-N27), and the FFG (QSense4Power, 877615). The authors acknowledge TU Wien Bibliothek for financial support through its Open Access Funding Program. Publisher Copyright: {\textcopyright} 2022 The Author(s)",

year = "2022",

month = may,

doi = "10.1016/j.sse.2022.108262",

language = "English",

volume = "191",

journal = "Solid-State Electronics",

issn = "0038-1101",

}

TY - JOUR

T1 - Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon

AU - Aguinsky, Luiz Felipe

AU - Rodrigues, Frâncio

AU - Wachter, Georg

AU - Trupke, Michael

AU - Schmid, Ulrich

AU - Hössinger, Andreas

AU - Weinbub, Josef

N1 - Funding Information: The financial support by the Austrian Federal Ministry for Digital and Economic Affairs, the National Foundation for Research, Technology and Development and the Christian Doppler Research Association is gratefully acknowledged. M. Trupke and G. Wachter gratefully acknowledge support from the EU H2020 framework programme (QuanTELCO, 862721), the FWF (SiC-EiC, I 3167-N27), and the FFG (QSense4Power, 877615). The authors acknowledge TU Wien Bibliothek for financial support through its Open Access Funding Program. Publisher Copyright: © 2022 The Author(s)

PY - 2022/5

Y1 - 2022/5

KW - Isotropic etching

KW - MEMS

KW - Microfabrication

KW - Optical devices

KW - SF plasma etching

KW - Topography simulations

KW - FLUX CALCULATION

KW - SF(6 )plasma etching

UR - https://www.scopus.com/pages/publications/85125520253

U2 - 10.1016/j.sse.2022.108262

DO - 10.1016/j.sse.2022.108262

M3 - Article

AN - SCOPUS:85125520253

SN - 0038-1101

VL - 191

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108262

ER -

Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon

Funding

Austrian Fields of Science 2012

Keywords

Access to Document

Other files and links

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QuanTELCO: Quantum Emitters for Telecommunication in the O-Band

SiC-EiC: Quantum control of spin centers in silicon carbide with microcavities

Cite this

Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon

Funding

Austrian Fields of Science 2012

Keywords

Access to Document

Other files and links

Fingerprint

Projects

QuanTELCO: Quantum Emitters for Telecommunication in the O-Band

SiC-EiC: Quantum control of spin centers in silicon carbide with microcavities

Cite this